NVM
  • Not Logic CMOS
    • EPROM
    • non-flash EEPROM
      • erasable in small blocks, typically bytes
    • Flash
      • It is a specific type of EEPROM.
      • NOR type
        • long erase and write times
        • full address and data buses, allowing random access to any memory location
        • endurance is 10,000 to 1,000,000 erase cycles
      • NAND type
        • faster erase and write times
        • a smaller chip area per cell, thus allowing greater storage densities and lower costs per bit than NOR flash
        • ten times the endurance of NOR flash
        • Data must be read on a block-wise basis, with typical block sizes of hundreds to thousands of bits
  • Logic CMOS
  • OTP(One-time Programmable) NVM
  • MTP(Multiplie-time Programmable) NVM
  • Embedded Flash(eFlash)
    • used for code storage that changes often
  • ROM
  • Electrical Fuse(eFuse)
    • OTP
    • bitcell is the largest of the standard CMOS NVM technologies
  • CMOS Floating Gate
    • OTP
    • MTP
  • Antifuse
    • OTP
    • the opposite of an eFuse
    • The circuit is open (high resistance) to begin with and is programmed closed by applying electrical stress that creates a low resistance conductive path.
Unless otherwise stated, the content of this page is licensed under Creative Commons Attribution-ShareAlike 3.0 License